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| CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 450V ,5.6A ,RDS(ON)= 700m @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole. D 6 G G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 450 30 5.6 17 5.6 45 0.36 -55 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 6-107 2.8 65 C/W C/W CEF10N4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=9.16mH RG=25 Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING 6 EAS IAS 450 10 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS a VGS = 0V, ID = 250A VDS = 450V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 6A VGS = 10V, VDS = 10V VDS = 50V, ID = 6A VDD = 200V, ID = 10A, VGS = 10V, RGEN = 9.1 450 25 100 2 100 V A 500 nA 4 600 700 V m A 6 14 27 50 24 48 75 125 100 60 65 7 25 S ns ns ns ns nC nC nC ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 10 3 SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320V, ID = 10A, VGS = 10V 6-108 4 15 CEF10N4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 1400 330 120 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 6 DRAIN-SOURCE DIODE CHARACTERISTICS VSD VGS = 0V, Is =10A 2.0 V Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 6 VGS=10,8,7,6V 5 20 25 C ID, Drain Current(A) 4 3 VGS=5V 2 1 0 0 1 2 3 4 5 6 ID, Drain Current (A) 15 -55 C 10 125 C 5 0 0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 6-109 CEF10N4 1800 3.0 RDS(ON), Normalized Drain-Source On-Resistance Ciss 1500 VGS=5V 2.5 2.0 Tj=125 C 1.5 25 C 1.0 0.5 0 -55 C C, Capacitance (pF) 1200 900 600 Coss 300 0 0 5 10 15 20 25 Crss 6 0 5 10 15 20 25 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 18 Figure 6. Breakdown Voltage Variation with Temperature 20 gFS, Transconductance (S) 12 9 6 3 0 0 5 10 15 20 Is, Source-drain current (A) 15 VDS=10V 10 VDS=0V 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 6-110 Figure 8. Body Diode Forward Voltage Variation with Source Current CEF10N4 VGS, Gate to Source Voltage (V) 15 12 9 6 3 0 0 6 12 18 24 30 36 42 48 Qg, Total Gate Charge (nC) 100 D=0.01 ID, Drain Current (A) VDS=320V ID=10A 40 10 R DS 10 (O N) Li t mi D C ;1 00 10 1m s 0 s 10 m m s s 1 VGS=20V Tc=25 C Single Pulse 1 10 100 500 1000 0.1 6 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.01 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 1 10 100 1000 10000 0.1 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 6-111 |
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